MOSFET N-CH 60V 15A PWRDI3333
Manufacturer: Diodes Incorporated
Win Source Part Number: 800783-DMT6007LFG-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2.2W , 62.5W (Tc)
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 41.3nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2090pF at 30V
Current - Continuous Drain (Id) at 25°C: 15A , 80A (Tc)
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±20V
N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8
N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8
N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8
MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W
MOSFET, N-CH, 60V, 80A, POWERDI 3333 ROHS COMPLIANT: YES
MOSFET N-CH 60V 15A PWRDI3333
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMT6007LFG-7 | 800783-DMT6007LFG-7 | DMT6007LFG-7DIDKR-ND | DMT6007LFG-7 | 81AH8914 | DMT6007LFG-7 |
| Product Name | Single FETs, MOSFETs | FETs - Single - DMT6007LFG-7 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 80A, Powerdi 3333 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | |||||
| IDSS | 15000 milliamps | |||||
| PD | 2200 milliwatts | 2200 to 62500 milliwatts |
