DIODES Incorporated FETs - Single - DMT6007LFG-7 DMT6007LFG-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 800783-DMT6007LFG-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 2.2W , 62.5W (Tc) Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 2,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 6mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 41.3nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2090pF at 30V Current - Continuous Drain (Id) at 25°C: 15A , 80A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±20V
  • FETs - Single - DMT6007LFG-7 - 800783-DMT6007LFG-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMT6007LFG-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - DMT6007LFG-7DIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMT6007LFG-7DICT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMT6007LFG-7DITR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 60V, 80A, Powerdi 3333 Rohs Compliant Diodes Inc. - 81AH8914 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMT6007LFG-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 800783-DMT6007LFG-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 2.2W , 62.5W (Tc) Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 2,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 6mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 41.3nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2090pF at 30V Current - Continuous Drain (Id) at 25°C: 15A , 80A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±20V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - DMT6007LFG-7 - 800783-DMT6007LFG-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - DMT6007LFG-7
800783-DMT6007LFG-7
FETs - Single - DMT6007LFG-7 800783-DMT6007LFG-7
Manufacturer: Diodes Incorporated Win Source Part Number: 800783-DMT6007LFG-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 2.2W , 62.5W (Tc) Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 2,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 6mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 41.3nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2090pF at 30V Current - Continuous Drain (Id) at 25°C: 15A , 80A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±20V

Manufacturer: Diodes Incorporated
Win Source Part Number: 800783-DMT6007LFG-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2.2W , 62.5W (Tc)
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 41.3nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2090pF at 30V
Current - Continuous Drain (Id) at 25°C: 15A , 80A (Tc)
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - DMT6007LFG-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMT6007LFG-7
Single FETs, MOSFETs DMT6007LFG-7
MOSFET N-CH 60V 15A PWRDI3333

MOSFET N-CH 60V 15A PWRDI3333

Supplier's Site Datasheet
Single FETs, MOSFETs - DMT6007LFG-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMT6007LFG-7DIDKR-ND
Single FETs, MOSFETs DMT6007LFG-7DIDKR-ND
N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8

N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8

Buy Now Datasheet
Single FETs, MOSFETs - DMT6007LFG-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMT6007LFG-7DICT-ND
Single FETs, MOSFETs DMT6007LFG-7DICT-ND
N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8

N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8

Buy Now Datasheet
Single FETs, MOSFETs - DMT6007LFG-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMT6007LFG-7DITR-ND
Single FETs, MOSFETs DMT6007LFG-7DITR-ND
N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8

N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8

Buy Now Datasheet
Mosfet, N-Ch, 60V, 80A, Powerdi 3333 Rohs Compliant Diodes Inc. - 81AH8914 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 80A, Powerdi 3333 Rohs Compliant Diodes Inc.
81AH8914
Mosfet, N-Ch, 60V, 80A, Powerdi 3333 Rohs Compliant Diodes Inc. 81AH8914
MOSFET, N-CH, 60V, 80A, POWERDI 3333 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 80A, POWERDI 3333 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMT6007LFG-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMT6007LFG-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMT6007LFG-7
MOSFET N-CH 60V 15A PWRDI3333

MOSFET N-CH 60V 15A PWRDI3333

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMT6007LFG-7
MOSFET DMT6007LFG-7
MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W

MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 800783-DMT6007LFG-7 DMT6007LFG-7 DMT6007LFG-7DIDKR-ND 81AH8914 DMT6007LFG-7 DMT6007LFG-7
Product Name FETs - Single - DMT6007LFG-7 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 60V, 80A, Powerdi 3333 Rohs Compliant Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
PD 2200 to 62500 milliwatts 2200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 8-PowerVDFN 8-PowerVDFN TO-3 41.3 nC @ 10 V
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