DIODES Incorporated Single FETs, MOSFETs DMT6006SPSW-13

The DMT6006SPSW-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package, designed for high-efficiency power management applications such as synchronous rectifiers and DC-DC converters. It has a maximum continuous drain current of 98A at TC = +25°C and a low on-state resistance of 6.2mΩ at VGS = 10V. The device supports 100% unclamped inductive switching (UIS) testing, features fast switching speed, and is RoHS compliant with a halogen- and antimony-free "Green" molding compound. Thermal resistance from junction to case is 1.4°C/W. It is qualified to AEC-Q100/101/104/200 standards and manufactured in IATF 16949 certified facilities. The package has a footprint of 5.15mm x 6.40mm BSC with an exposed drain pad for improved thermal performance. Moisture sensitivity is Level 1 per J-STD-020, and the case is UL 94 V-0 rated.