N-Channel 60V 100A (Tc) 2.3W Surface Mount PowerDI5060-8
MOSFET N-CH 60V 100A PWRDI5060-8
MOSFET N-CH 60V 100A PWRDI5060-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 869138-DMT6002LPS-13
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 60 V 100A (Tc) 2.3W Surface Mount PowerDI5060-8
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMT6002
Categories: Discrete Semiconductor Products
Case / Package: PowerDI5060-8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
Estimated Pruduction Lead Time: 39 Weeks
REACH Status: REACH Affected
HTSUS: 8541.29.0095
MOSFET N-CH 60V 100A PWRDI5060-8
MOSFET N-CH 60V 100A PWRDI5060-8
MOSFET, N-CH, 60V, 100A, POWERDI 5060; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 31-DMT6002LPS-13TR-ND | 869138-DMT6002LPS-13 | DMT6002LPS-13 | DMT6002LPS-13 | 12AC0724 | DMT6002LPS-13 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6002LPS-13 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 100A, Powerdi 5060; Transistor Polarity Diodes Inc. | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerTDFN | SOT3; PowerDI5060-8 | 8-PowerTDFN | 8-PowerTDFN | TO-3 | |
| Transistor Grade / Operating Range | Automotive | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
