MOSFET N-CH 50V 9.1A 6UDFN Product overview: DMT5015LFDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 9.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 9.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT5015LFDF-7 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1055821-DMT5015LFDF-
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 820mW (Ta)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902.7 pF @ 25 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CSD18543Q3A; DMT6016LSS-13; FDMA8051L; DMT6016LPS-13; DMP4013LFG-7; NVD5865NLT4G; IRF7469TRPBFDMT5015L
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: DMT5015LFDF-7DIDKR,D
Base Product Number: DMT5015
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 50V 9.1A 6UDFN
MOSFET N-CH 50V 9.1A 6UDFN
MOSFET, N-CH, 9.1A, 50V, UDFN2020; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:9.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMT5015LFDF-7 | 1055821-DMT5015LFDF-7 | DMT5015LFDF-7 | DMT5015LFDF-7 | 39AH6615 | DMT5015LFDF-7 |
| Product Name | 50V 9.1A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 9.1A, 50V, Udfn2020; Channel Type Diodes Inc. | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 50 volts | 50 volts | ||||
| PD | 1970 milliwatts | 820 milliwatts | 820 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tape & Reel (TR) | SOT3 | 902.7 pF @ 25 V | 6-UDFN Exposed Pad | TO-3 |
