The DMT5012LFVW-7 is a 50V N-channel enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power management applications. It has a maximum continuous drain current of 51.4A at TC = +25°C and a on-resistance of 13mΩ at VGS = 10V and 20mΩ at VGS = 4.5V. The device supports 100% unclamped inductive switching, features a wettable flank for optical inspection, and isRoHS compliant with halogen and antimony-free materials. It is rated for operation from -55°C to +150°C, with a thermal resistance from junction to case of 2.43°C/W and junction-to-ambient of 47°C/W. The part meets AEC-Q100/101/200 qualifications and is manufactured in IATF 16949 certified facilities. It is supplied in tape and reel packaging, 2000 per reel.
MOSFET, N-CH, 50V, 51.4A, POWERDI 3333 ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 13AJ5655 |
| Product Name | Mosfet, N-Ch, 50V, 51.4A, Powerdi 3333 Rohs Compliant Diodes Inc. |
| Package Type | TO-3 |
