MOSFET N-CH 40V 100A PWRDI5060-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 869136-DMT4002LPS-13
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 40 V 100A (Ta) 2.3W Surface Mount PowerDI5060-8
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMT4002
Categories: Discrete Semiconductor Products
Case / Package: PowerDI5060-8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
Estimated Pruduction Lead Time: 39 Weeks
REACH Status: REACH Affected
HTSUS: 8541.29.0095
N-Channel 40V 100A (Ta) 2.3W Surface Mount PowerDI5060-8
MOSFET N-CH 40V 100A PWRDI5060-8
MOSFET N-CH 40V 100A PWRDI5060-8
MOSFET N-CH 40V 100A PWRDI5060-8
MOSFET N-CH 40V 100A POWERDI5060
MOSFET, N-CH, 40V, 100A, POWERDI 5060; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMT4002LPS-13 | 869136-DMT4002LPS-13 | 31-DMT4002LPS-13TR-ND | DMT4002LPS-13 | 233-DMT4002LPS-13 | DMT4002LPS-13 | 12AC0723 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT4002LPS-13 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 40V 100A POWERDI5060 | MOSFET | Mosfet, N-Ch, 40V, 100A, Powerdi 5060; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | ||||||
| IDSS | 100000 milliamps | 100000 milliamps | |||||
| PD | 2300 milliwatts | 2300 milliwatts |
