The DMT35M8LDG-13 is an asymmetric dual N-channel MOSFET in a PowerDI®3333-8 package, designed for high-efficiency power management. Each channel has a drain-source voltage rating of 30V, with continuous drain currents up to 17.0A and 15.3A at VGS = 10V. On-resistance is 4.7mΩ for Q1 and 5.8mΩ for Q2 at VGS = 10V, and 5.7mΩ and 7.3mΩ at VGS = 4.5V. The device features a thermal resistance from junction to ambient of 129°C/W on a single-sided FR-4 board, operates from -55°C to +150°C, and is RoHS compliant with a 'Green' molding compound. It is supplied in 3000-piece tape and reel packaging.
MOSFET 2N-CH 30V 17A PWRDI3333
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMT35M8LDG-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 8-PowerVDFN |
