DIODES Incorporated Single FETs, MOSFETs DMT31M8LFVWQ-7

DMT31M8LFVWQ-7 is a 30V N-channel enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power management. It features a low RDS(ON) of 1.6mΩ at VGS=10V and 2.6mΩ at VGS=4.5V, with a maximum continuous drain current of 138A at TC=25°C. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. It has a thermal resistance of 36.3°C/W from junction to ambient when mounted with thermal bias to the drain pad, and operates from -55°C to +150°C. The package is RoHS compliant, halogen and antimony free, and meets UL 94 V-0 flammability rating. Moisture sensitivity is Level 1 per J-STD-020. The part is supplied in tape and reel packaging with 2,000 units per reel.