MOSFET N-CH 30V 35.8A PWRDI5060
N-Channel 30V 35.8A (Ta) 2.5W (Ta) Surface Mount PowerDI5060-8
MOSFET N-CH 30V 35.8A PWRDI5060
MOSFET N-CH 30V 35.8A PWRDI5060
MOSFET N-CH 30V 35.8A PWRDI5060
MOSFET, N-CH, 30V, 35.8A, POWERDI 5060; Transistor Polarity:N Channel; Continuous Drain Current Id:35.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMT31M6LPS-13 | 31-DMT31M6LPS-13TR-ND | DMT31M6LPS-13 | 12AC0722 | DMT31M6LPS-13 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 35.8A, Powerdi 5060; Transistor Polarity Diodes Inc. | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 35800 milliamps | 35800 milliamps | |||
| PD | 2500 milliwatts |
