DIODES Incorporated Single FETs, MOSFETs DMT31M1LPSW-13

DMT31M1LPSW-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI5060-8 package, designed for notebook battery power management and load switching applications. It features a drain-source on-resistance of 0.95mΩ at VGS=10V and 1.5mΩ at VGS=4.5V, with continuous drain current ratings of 130A at TC=25°C and 42A at TA=25°C. The device supports a pulsed drain current of 500A and has a thermal resistance of 42°C/W when mounted on an FR-4 substrate with 2oz copper and a 1-inch square copper plate. The package has a profile under 1.1mm and a weight of approximately 0.097 grams, with a lead-free finish and compliance to RoHS 3 and halogen/antimony-free 'Green' standards. Thermal resistance from junction to case is 3.5°C/W, and the operating temperature range is -55°C to +150°C. The component meets UL 94 V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.