MOSFET 2N-CHA 30V 7.7A DFN2020
Mosfet Array 2 N-Channel (Dual) 30V 7.7A 700mW Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 30V 7.7A 700mW Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 30V 7.7A 700mW Surface Mount U-DFN2020-6 (Type B)
MOSFET 2N-CH 30V 7.7A 6UDFN Product overview: DMT3020LFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMT3020LFDB-7 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1278580-DMT3020LFDB-
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: 700mW
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: DMT3020LFDB-7DIDKR,D
Base Product Number: DMT3020
DUAL MOSFET, N-CH, 30V, 7.7A, UDFN2020 ROHS COMPLIANT: YES
MOSFET 2N-CH 30V 7.7A 6UDFN
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMT3020LFDB-7 | DMT3020LFDB-7DICT-ND | 289-DMT3020LFDB-7 | 1278580-DMT3020LFDB-7 | 81AH8911 | DMT3020LFDB-7 | DMT3020LFDB-7 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | 30V 7.7A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Dual Mosfet, N-Ch, 30V, 7.7A, Udfn2020 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 7700 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
