The DMT10H032LDV-13 is a dual 100V N-channel enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power management applications. It has a maximum continuous drain current of 18A at 25°C case temperature and a drain-source on-resistance of 36mΩ at VGS=10V and 50mΩ at VGS=4.5V. The device features fast switching speed, low input capacitance, and is 100% tested for unclamped inductive switching. The package is a molded plastic case with a 94V-0 flammability rating, moisture sensitivity level 1 per J-STD-020, and uses a matte tin annealed copper leadframe. It is RoHS compliant, halogen-free, and suitable for automotive applications requiring PPAP capability and IATF 16949 manufacturing. Thermal resistance is 51°C/W with an external copper plate and 130°C/W with minimum pad layout. Operating junction temperature ranges from -55°C to +150°C. The part is supplied in 3,000-unit tape and reel packaging.
MOSFET 2N-CH 100V 18A PWRDI3333
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMT10H032LDV-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 8-PowerVDFN |
