DIODES Incorporated Single FETs, MOSFETs DMT10H010LSS-13

N-Channel 100V 11.5A (Ta), 29.5A (Tc) 1.4W (Ta) Surface Mount 8-SO

N-Channel 100V 11.5A (Ta), 29.5A (Tc) 1.4W (Ta) Surface Mount 8-SO

N-Channel 100V 11.5A (Ta), 29.5A (Tc) 1.4W (Ta) Surface Mount 8-SO

MOSFET N-CH 100V 11.5A/29.5A 8SO Product overview: DMT10H010LSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 11.5A, 29.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 11.5A, 29.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT10H010LSS-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 801712-DMT10H010LSS-13
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.4W
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.5mOhm at 13A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 50V
Current - Continuous Drain (Id) at 25°C: 11.5A , 29.5A (Tc)
Vgs(th) (Maximum) at Id: 2.8V at 250μA
Maximum Vgs: ±20V

MOSFET N-CH 100V 11.5A/29.5A 8SO