N-Channel 100V 9.4A (Ta), 98A (Tc) 1.2W (Ta), 139W (Tc) Surface Mount PowerDI5060-8
N-Channel 100V 9.4A (Ta), 98A (Tc) 1.2W (Ta), 139W (Tc) Surface Mount PowerDI5060-8
N-Channel 100V 9.4A (Ta), 98A (Tc) 1.2W (Ta), 139W (Tc) Surface Mount PowerDI5060-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 869110-DMT10H010LPS-
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 9.4A (Ta), 98A (Tc) 1.2W (Ta), 139W (Tc) Surface Mount PowerDI5060-8
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMT10
Categories: Discrete Semiconductor Products
Case / Package: PowerDI5060-8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 39 Weeks
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Other Part Number: DMT10H010LPS-13DIDKR
MOSFET N-CH 100V 9.4A PWRDI5060
MOSFET, N-CH, 100V, 98A, POWERDI 5060 ROHS COMPLIANT: YES
MOSFET 100V N-Ch Enh FET Low Rdson
MOSFET N-CH 100V 9.4A PWRDI5060
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMT10H010LPS-13DIDKR-ND | 869110-DMT10H010LPS-13 | DMT10H010LPS-13 | 28AK8856 | DMT10H010LPS-13 | DMT10H010LPS-13 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT10H010LPS-13 | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 98A, Powerdi 5060 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerTDFN | SOT3; PowerDI5060-8 | 8-PowerTDFN | TO-3 | 8-PowerTDFN | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
