MOSFET N-CH 100V 68.8A TO252 Product overview: DMT10H010LK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 68.8A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 68.8A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT10H010LK3-13 can be used for catalog matching and distributor lookup.
N-Channel 100V 68.8A (Tc) 3W (Ta) Surface Mount TO-252-3
N-Channel 100V 68.8A (Tc) 3W (Ta) Surface Mount TO-252-3
N-Channel 100V 68.8A (Tc) 3W (Ta) Surface Mount TO-252-3
Manufacturer: AMIS
Category: Connectors,Interconn
Part Status: Obsolete
FET Type: N and P-Channel
Technology: Standard
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 77µA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V
MOSFET N-CH 100V 68.8A TO252
MOSFET, N-CH, 100V, 68.8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:68.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 68.8A TO252
100V 68.8A 8.8mΩ@10V,13A 3W 3V@250uA N Channel TO-252 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMT10H010LK3-13 | DMT10H010LK3-13DITR-ND | DMT10H010LK3-13 | DMT10H010LK3-13 | 12AC0718 | DMT10H010LK3-13 | DMT10H010LK3-13 | |
| Product Name | 100V 68.8A TO252 MOSFET Transistor | Single FETs, MOSFETs | Connectors,Interconnects | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 68.8A, To-252; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | P-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 62.5 milliwatts | 3000 milliwatts | 3000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
