Manufacturer: Diodes Incorporated
Win Source Part Number: 803442-DMT10H010LCT
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 2W , 139W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.5mOhm at 13A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 50V
Current - Continuous Drain (Id) at 25°C: 98A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V
N-Channel 100V 98A (Tc) 2W (Ta), 139W (Tc) Through Hole TO-220-3
MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A
MOSFET N-CH 100V 98A TO220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 803442-DMT10H010LCT | DMT10H010LCTDI-ND | DMT10H010LCT | DMT10H010LCT |
| Product Name | FETs - Single - DMT10H010LCT | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||
| PD | 2000 to 139000 milliwatts |
