DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3019SSD-13 DMS3019SSD-13

Manufacturer: Diodes Incorporated
Win Source Part Number: 130031-DMS3019SSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 1.19W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7A, 5.7A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1932pF @ 15V
Maximum Rds On at Id,Vgs: 15 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Mosfet Array 2 N-Channel (Dual) 30V 7A, 5.7A 1.19W Surface Mount 8-SO

MOSFET 2N-CH 30V 7A/5.7A 8SO Product overview: DMS3019SSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7A, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, 5.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMS3019SSD-13 can be used for catalog matching and distributor lookup.