DIODES Incorporated Single FETs, MOSFETs DMS3016SSS-13

Description
N-Channel 30V 9.8A (Ta) 1.54W (Ta) Surface Mount 8-SO
Request a Quote Datasheet
Description
N-Channel 30V 9.8A (Ta) 1.54W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - DMS3016SSS-13DI-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMS3016SSS-13DI-ND
Single FETs, MOSFETs DMS3016SSS-13DI-ND
N-Channel 30V 9.8A (Ta) 1.54W (Ta) Surface Mount 8-SO

N-Channel 30V 9.8A (Ta) 1.54W (Ta) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3016SSS-13 - 127934-DMS3016SSS-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3016SSS-13
127934-DMS3016SSS-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3016SSS-13 127934-DMS3016SSS-13
Manufacturer: Diodes Incorporated Win Source Part Number: 127934-DMS3016SSS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 1.54W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.8A (Ta) Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1849pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 13 mOhm @ 9.8A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Diodes Incorporated
Win Source Part Number: 127934-DMS3016SSS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 1.54W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.8A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1849pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 13 mOhm @ 9.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMS3016SSS-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMS3016SSS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMS3016SSS-13
MOSFET N-CH 30V 9.8A 8SO

MOSFET N-CH 30V 9.8A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMS3016SSS-13DI-ND 127934-DMS3016SSS-13 DMS3016SSS-13
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3016SSS-13 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
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