DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3014SFG-7 DMS3014SFG-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033878-DMS3014SFG-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 45.7nC @ 10V Max Input Capacitance: 4310pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 13 mOhm @ 10.4A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Consumer Electronics, Portable Devices Quantity per package: 2k pcs
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033878-DMS3014SFG-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 45.7nC @ 10V Max Input Capacitance: 4310pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 13 mOhm @ 10.4A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Consumer Electronics, Portable Devices Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3014SFG-7 - 1033878-DMS3014SFG-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3014SFG-7
1033878-DMS3014SFG-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3014SFG-7 1033878-DMS3014SFG-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033878-DMS3014SFG-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 45.7nC @ 10V Max Input Capacitance: 4310pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 13 mOhm @ 10.4A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Consumer Electronics, Portable Devices Quantity per package: 2k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033878-DMS3014SFG-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.5A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 45.7nC @ 10V
Max Input Capacitance: 4310pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 13 mOhm @ 10.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Consumer Electronics, Portable Devices
Quantity per package: 2k pcs

Buy Now Datasheet
Single FETs, MOSFETs - DMS3014SFG-7DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMS3014SFG-7DICT-ND
Single FETs, MOSFETs DMS3014SFG-7DICT-ND
N-Channel 30V 9.5A (Ta) 1W (Ta) Surface Mount PowerDI3333-8

N-Channel 30V 9.5A (Ta) 1W (Ta) Surface Mount PowerDI3333-8

Buy Now Datasheet
Single FETs, MOSFETs - DMS3014SFG-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMS3014SFG-7DITR-ND
Single FETs, MOSFETs DMS3014SFG-7DITR-ND
N-Channel 30V 9.5A (Ta) 1W (Ta) Surface Mount PowerDI3333-8

N-Channel 30V 9.5A (Ta) 1W (Ta) Surface Mount PowerDI3333-8

Buy Now Datasheet
Single FETs, MOSFETs - DMS3014SFG-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMS3014SFG-7DIDKR-ND
Single FETs, MOSFETs DMS3014SFG-7DIDKR-ND
N-Channel 30V 9.5A (Ta) 1W (Ta) Surface Mount PowerDI3333-8

N-Channel 30V 9.5A (Ta) 1W (Ta) Surface Mount PowerDI3333-8

Buy Now Datasheet
Singapore
30V 9.5A MOSFET Transistor
278-DMS3014SFG-7
30V 9.5A MOSFET Transistor 278-DMS3014SFG-7
MOSFET N-CH 30V 9.5A PWRDI3333-8 Product overview: DMS3014SFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMS3014SFG-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 9.5A PWRDI3333-8 Product overview: DMS3014SFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMS3014SFG-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMS3014SFG-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMS3014SFG-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMS3014SFG-7
MOSFET N-CH 30V 9.5A PWRDI3333-8

MOSFET N-CH 30V 9.5A PWRDI3333-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1033878-DMS3014SFG-7 DMS3014SFG-7DICT-ND 278-DMS3014SFG-7 DMS3014SFG-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMS3014SFG-7 Single FETs, MOSFETs 30V 9.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 1000 milliwatts 2100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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