DIODES Incorporated 20V 2.9A MOSFET Transistor DMS2120LFWB-7

MOSFET P-CH 20V 2.9A 8DFN Product overview: DMS2120LFWB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMS2120LFWB-7 can be used for catalog matching and distributor lookup.

P-Channel 20V 2.9A (Ta) 1.5W (Ta) Surface Mount 8-DFN3020B (3x2)

Manufacturer: Diodes Incorporated
Win Source Part Number: 014505-DMS2120LFWB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-DFN3020B (3x2)
Dimension: 8-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Input Capacitance: 632pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 95 mOhm @ 2.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

MOSFET P-CH 20V 2.9A 8DFN