MOSFET P-CHANNEL 40V 11.4A 8SO
MOSFET P-CHANNEL 40V 11.4A 8SO
MOSFET P-CHANNEL 40V 11.4A 8SO
P-Channel 40V 11.4A (Ta) 1.8W Surface Mount 8-SO
Win Source Part Number: 1055803-DMPH4015SSSQ
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): DMPH4015SSSQ-13DMPH4
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMPH4015
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, P-CH, 40V, 11.4A, SOIC ROHS COMPLIANT: YES
MOSFET P-CHANNEL 40V 11.4A 8SO
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMPH4015SSSQ-13 | 31-DMPH4015SSSQ-13DKR-ND | 1055803-DMPH4015SSSQ-13 | 28AK8663 | DMPH4015SSSQ-13 | DMPH4015SSSQ-13 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, P-Ch, 40V, 11.4A, Soic Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | |||||
| IDSS | 11400 milliamps | |||||
| PD | 1800 milliwatts | 1800 milliwatts |