The MOSFET 07AH3818 is a P-channel device with a maximum drain-source voltage of -60V and a continuous drain current rating of -1.5A at a temperature of 25¬8C. It features a low on-resistance of 350m,Ѷ at a gate-source voltage of -10V and 550m,Ѷ at -4.5V, making it suitable for applications requiring efficient power management. The device is designed for high-efficiency applications such as battery charging, DC-DC converters, and portable power adapters. It is housed in a SOT23 package and is fully compliant with RoHS standards, ensuring it is lead-free and environmentally friendly. The MOSFET also meets AEC-Q101 standards, indicating its reliability for automotive applications. With low input capacitance and fast switching speeds, this component is ideal for engineers looking for a robust solution in power management circuits.
MOSFET P-CH 60V 1.5A SOT23 Product overview: DMP6350S-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.5A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.5A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP6350S-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033875-DMP6350S-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 720mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4.1nC @ 10V
Max Input Capacitance: 206pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 900mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
P-Channel 60V 1.5A (Ta) 720mW (Ta) Surface Mount SOT-23-3
P-Channel 60V 1.5A (Ta) 720mW (Ta) Surface Mount SOT-23-3
P-Channel 60V 1.5A (Ta) 720mW (Ta) Surface Mount SOT-23-3
MOSFET P-CH 60V 1.5A SOT23
MOSFET P-CH 60V 1.5A SOT23
MOSFET, P-CH, -60V, -1.5A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
60V 1.5A 350mΩ@10V,900mA 720mW 3V@250uA P Channel SOT-23 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMP6350S-7 | 1033875-DMP6350S-7 | DMP6350S-7DITR-ND | DMP6350S-7 | DMP6350S-7 | 07AH3818 | DMP6350S-7 | DMP6350S-7 |
| Product Name | 60V 1.5A SOT23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP6350S-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -60V, -1.5A, Sot23; Channel Type Diodes Inc. | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| PD | 1.17 milliwatts | 720 milliwatts | 720 milliwatts | 720 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
