MOSFET P-CH 60V 9.4A TO252
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033873-DMP6185SK3-1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 708pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
P-Channel 60V 9.4A (Tc) 1.6W (Ta) Surface Mount TO-252-3
P-Channel 60V 9.4A (Tc) 1.6W (Ta) Surface Mount TO-252-3
P-Channel 60V 9.4A (Tc) 1.6W (Ta) Surface Mount TO-252-3
MOSFET, P-CH, 60V, 9.4A, TO-252 ROHS COMPLIANT: YES
MOSFET P-CH 60V 9.4A TO252
60V 9.4A 1.6W 150mΩ@10V,12A 3V@250uA P Channel TO-252 MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMP6185SK3-13 | 1033873-DMP6185SK3-13 | 31-DMP6185SK3-13CT-ND | 28AK8810 | DMP6185SK3-13 | DMP6185SK3-13 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP6185SK3-13 | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 9.4A, To-252 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||
| IDSS | 9400 milliamps | |||||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts |