MOSFET P-CH 60V 7.3A TSOT26 Product overview: DMP6110SVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP6110SVT-7 can be used for catalog matching and distributor lookup.
P-Channel 60V 7.3A (Tc) 1.2W (Ta) Surface Mount TSOT-23-6
P-Channel 60V 7.3A (Tc) 1.2W (Ta) Surface Mount TSOT-23-6
P-Channel 60V 7.3A (Tc) 1.2W (Ta) Surface Mount TSOT-23-6
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033871-DMP6110SVT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TSOT-26
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7.3A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17.2nC @ 10V
Max Input Capacitance: 969pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
MOSFET P-CH 60V 7.3A TSOT26
MOSFET P-CH 60V 7.3A TSOT26
MOSFET 60V P-Ch Enh FET 60Vds 20Vgs
MOSFET, AEC-Q101, P-CH, -7.3A, -60V; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMP6110SVT-7 | DMP6110SVT-7DIDKR-ND | 1033871-DMP6110SVT-7 | DMP6110SVT-7 | DMP6110SVT-7 | DMP6110SVT-7 | 39AH6611 |
| Product Name | 60V 7.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP6110SVT-7 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, P-Ch, -7.3A, -60V; Channel Type Diodes Inc. |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 1.2 milliwatts | 1200 milliwatts | 1200 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
