DIODES Incorporated Single FETs, MOSFETs DMP6110SFDF-13

Description
MOSFET P-CH 60V 4.2A 6UDFN
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Description
MOSFET P-CH 60V 4.2A 6UDFN
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Datasheet
Datasheet Summary
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The MOSFET, P-Channel, -60V, -3.5A, UDFN2020-6 is designed for high-efficiency power management applications, including battery management and DC-DC converters. It features a maximum drain-source voltage of -60V and a continuous drain current rating of -3.5A at a gate-source voltage of -10V. The on-resistance is low, measuring 110m,Ѷ at VGS = -10V and 130m,Ѷ at VGS = -4.5V, which contributes to its efficiency in power applications. This device is characterized by a low gate threshold voltage ranging from -1V to -3V, low input capacitance, and fast switching speeds, making it suitable for various power management functions. It is also compliant with RoHS standards and is classified as a "Green" device, being halogen and antimony-free. The MOSFET is qualified to AEC-Q101 standards, ensuring high reliability for automotive and industrial applications. The package type is U-DFN2020-6, which is compact and suitable for space-constrained designs. The device has a moisture sensitivity level of 1 and is solderable per MIL-STD-202, Method 208. Overall, this MOSFET is a reliable choice for engineers looking for efficient switching solutions in their designs.

Datasheet Summary
Powered by GS/AI

The MOSFET, P-Channel, -60V, -3.5A, UDFN2020-6 is designed for high-efficiency power management applications, including battery management and DC-DC converters. It features a maximum drain-source voltage of -60V and a continuous drain current rating of -3.5A at a gate-source voltage of -10V. The on-resistance is low, measuring 110m,Ѷ at VGS = -10V and 130m,Ѷ at VGS = -4.5V, which contributes to its efficiency in power applications. This device is characterized by a low gate threshold voltage ranging from -1V to -3V, low input capacitance, and fast switching speeds, making it suitable for various power management functions. It is also compliant with RoHS standards and is classified as a "Green" device, being halogen and antimony-free. The MOSFET is qualified to AEC-Q101 standards, ensuring high reliability for automotive and industrial applications. The package type is U-DFN2020-6, which is compact and suitable for space-constrained designs. The device has a moisture sensitivity level of 1 and is solderable per MIL-STD-202, Method 208. Overall, this MOSFET is a reliable choice for engineers looking for efficient switching solutions in their designs.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMP6110SFDF-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMP6110SFDF-13
Single FETs, MOSFETs DMP6110SFDF-13
MOSFET P-CH 60V 4.2A 6UDFN

MOSFET P-CH 60V 4.2A 6UDFN

Supplier's Site Datasheet
Single FETs, MOSFETs - 31-DMP6110SFDF-13TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMP6110SFDF-13TR-ND
Single FETs, MOSFETs 31-DMP6110SFDF-13TR-ND
P-Channel 60V 4.2A (Ta) 1.97W (Ta) Surface Mount U-DFN2020-6 (Type F)

P-Channel 60V 4.2A (Ta) 1.97W (Ta) Surface Mount U-DFN2020-6 (Type F)

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMP6110SFDF-13DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMP6110SFDF-13DKR-ND
Single FETs, MOSFETs 31-DMP6110SFDF-13DKR-ND
MOSFET P-CH 60V 4.2A 6UDFN

MOSFET P-CH 60V 4.2A 6UDFN

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMP6110SFDF-13CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMP6110SFDF-13CT-ND
Single FETs, MOSFETs 31-DMP6110SFDF-13CT-ND
MOSFET P-CH 60V 4.2A 6UDFN

MOSFET P-CH 60V 4.2A 6UDFN

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 41V-60V

MOSFET MOSFET BVDSS: 41V-60V

Buy Now
Mosfet, P-Ch, -60V, -3.5A, Udfn2020-6; Transistor Polarity Diodes Inc. - 15AC8195 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -60V, -3.5A, Udfn2020-6; Transistor Polarity Diodes Inc.
15AC8195
Mosfet, P-Ch, -60V, -3.5A, Udfn2020-6; Transistor Polarity Diodes Inc. 15AC8195
MOSFET, P-CH, -60V, -3.5A, UDFN2020-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes

MOSFET, P-CH, -60V, -3.5A, UDFN2020-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP6110SFDF-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP6110SFDF-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP6110SFDF-13
MOSFET P-CH 60V 4.2A 6UDFN

MOSFET P-CH 60V 4.2A 6UDFN

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMP6110SFDF-13 31-DMP6110SFDF-13TR-ND DMP6110SFDF-13 15AC8195 DMP6110SFDF-13
Product Name Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, P-Ch, -60V, -3.5A, Udfn2020-6; Transistor Polarity Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
IDSS 4200 milliamps -3500 milliamps
PD 1970 milliwatts
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