DIODES Incorporated FET, MOSFET Arrays DMP58D0SV-7

Description
MOSFET 2P-CH 50V 0.16A SOT-563
Request a Quote Datasheet
Description
MOSFET 2P-CH 50V 0.16A SOT-563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMP58D0SV-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMP58D0SV-7
FET, MOSFET Arrays DMP58D0SV-7
MOSFET 2P-CH 50V 0.16A SOT-563

MOSFET 2P-CH 50V 0.16A SOT-563

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0SV-7 - 014504-DMP58D0SV-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0SV-7
014504-DMP58D0SV-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0SV-7 014504-DMP58D0SV-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014504-DMP58D0SV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: DMP58D0SV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 400mW Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 160mA Gate-Source Threshold Voltage: 2.1V @ 250μA Max Input Capacitance: 27pF @ 25V Maximum Rds On at Id,Vgs: 8 Ohm @ 100mA, 5V Alternative Parts (Cross-Reference): BSS84AKV,115; BSS84AKV; MCH6609; DMP58D0SV; Introduction Date: February 29, 2008 ECCN: EAR99 Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 014504-DMP58D0SV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMP58D0SV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 400mW
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 160mA
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Input Capacitance: 27pF @ 25V
Maximum Rds On at Id,Vgs: 8 Ohm @ 100mA, 5V
Alternative Parts (Cross-Reference): BSS84AKV,115; BSS84AKV; MCH6609; DMP58D0SV;
Introduction Date: February 29, 2008
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP58D0SV-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP58D0SV-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP58D0SV-7
MOSFET 2P-CH 50V 0.16A SOT-563

MOSFET 2P-CH 50V 0.16A SOT-563

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMP58D0SV-7 014504-DMP58D0SV-7 DMP58D0SV-7
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0SV-7 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; 2 P-Channel (Dual) P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 50 volts 50 volts
IDSS 160 milliamps
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