DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0LFB-7B DMP58D0LFB-7B

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 099264-DMP58D0LFB-7B Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 470mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-X1DFN1006 Dimension: 3-UFDFN Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 180mA (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Input Capacitance: 27pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 100mA, 5V Alternative Parts (Cross-Reference): BSS84AKM; DMN58D0LFB-7B; DMN58D0LFB-7; DMP58D0LFB-7B; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 099264-DMP58D0LFB-7B Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 470mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-X1DFN1006 Dimension: 3-UFDFN Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 180mA (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Input Capacitance: 27pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 100mA, 5V Alternative Parts (Cross-Reference): BSS84AKM; DMN58D0LFB-7B; DMN58D0LFB-7; DMP58D0LFB-7B; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0LFB-7B - 099264-DMP58D0LFB-7B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0LFB-7B
099264-DMP58D0LFB-7B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0LFB-7B 099264-DMP58D0LFB-7B
Manufacturer: Diodes Incorporated Win Source Part Number: 099264-DMP58D0LFB-7B Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 470mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-X1DFN1006 Dimension: 3-UFDFN Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 180mA (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Input Capacitance: 27pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 100mA, 5V Alternative Parts (Cross-Reference): BSS84AKM; DMN58D0LFB-7B; DMN58D0LFB-7; DMP58D0LFB-7B; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 099264-DMP58D0LFB-7B
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 470mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-X1DFN1006
Dimension: 3-UFDFN
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 180mA (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Input Capacitance: 27pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 100mA, 5V
Alternative Parts (Cross-Reference): BSS84AKM; DMN58D0LFB-7B; DMN58D0LFB-7; DMP58D0LFB-7B;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 099264-DMP58D0LFB-7B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP58D0LFB-7B
Polarity P-Channel; P-Channel
V(BR)DSS 50 volts
PD 470 milliwatts
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