Manufacturer: Diodes Incorporated
Win Source Part Number: 128062-DMP4047SSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 5.1A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21.5nC @ 10V
Max Input Capacitance: 1154pF @ 20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, MOSFET, DUAL P-CH, -40V ENH MIN RDSON, -20VGSS. FREE 2 YEAR RADWELL WARRANTY
Mosfet Array 2 P-Channel (Dual) 40V 5.1A 1.3W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 40V 5.1A 1.3W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 40V 5.1A 1.3W Surface Mount 8-SO
MOSFET 2P-CH 40V 5.1A 8SOIC
MOSFET 2P-CH 40V 5.1A 8SOIC
MOSFET 2P-CH 40V 5.1A 8SO
MOSFET, DUAL, P-CH, 40V, 5.1A ROHS COMPLIANT: YES
| Win Source Electronics | Radwell International | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 128062-DMP4047SSD-13 | 207448320 | DMP4047SSD-13DITR-ND | DMP4047SSD-13 | 233-DMP4047SSD-13 | DMP4047SSD-13 | 28AK8786 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP4047SSD-13 | Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET 2P-CH 40V 5.1A 8SOIC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, P-Ch, 40V, 5.1A Rohs Compliant Diodes Inc. |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | |||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 1300 milliwatts | 1800 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
