MOSFET BVDSS: 31V~40V SO-8 T&R 2
Manufacturer: Diodes Incorporated
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1055794-DMP4025LSDQ-
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): DMP4025LSDQ-13DMP402
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Shortage
RoHS: Non-Compliant
MOSFET 2P-CH 40V 5.8A 8SO
MOSFET 2P-CH 40V 5.8A 8SO
MOSFET 2P-CH 40V 5.8A 8SO
MOSFET 2P-CH 40V 5.8A 8SO Product overview: DMP4025LSDQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMP4025LSDQ-13 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 40V 5.8A 8SO
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMP4025LSDQ-13 | 1055794-DMP4025LSDQ-13 | 31-DMP4025LSDQ-13CT-ND | 289-DMP4025LSDQ-13 | DMP4025LSDQ-13 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP4025LSDQ-13 | FET, MOSFET Arrays | 40V 5.8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; 2 P-Channel (Dual) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 40 volts | 40 volts | |||
| IDSS | 5800 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |