DIODES Incorporated Single FETs, MOSFETs DMP31D7LFBQ-7B

The DMP31D7LFBQ is a P-channel enhancement mode MOSFET designed for high-efficiency power management applications, featuring a low on-state resistance and fast switching speed. It is packaged in an X1-DFN1006-3 case measuring 1.0 mm × 0.6 mm with a 0.50 mm height, suitable for space-constrained designs. The device has a drain-source voltage rating of -30 V, a continuous drain current of -0.81 A at +25°C with VGS = -10 V, and an on-resistance of 0.9 Ω at VGS = -10 V and 1.7 Ω at VGS = -4.5 V. Thermal resistance is 236 °C/W on a minimum pad layout and 141 °C/W with a 25 mm × 25 mm copper plate. The MOSFET is AEC-Q101 qualified, RoHS compliant, and rated for operation from -55 °C to +150 °C. It features an ESD-protected gate and is classified as UL 94 V-0.