MOSFET P-CH 30V 540MA 3DFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033856-DMP31D0UFB4-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 460mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 540mA (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 0.9nC @ 4.5V
Max Input Capacitance: 76pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 1 Ohm @ 400mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
P-Channel 30V 540mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3
P-Channel 30V 540mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3
P-Channel 30V 540mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3
MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K
MOSFET P-CH 30V 540MA 3DFN
MOSFET, P-CH, 30V, 0.54A, DFN1006 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMP31D0UFB4-7B | 1033856-DMP31D0UFB4-7B | DMP31D0UFB4-7BDICT-ND | DMP31D0UFB4-7B | DMP31D0UFB4-7B | 28AK8761 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP31D0UFB4-7B | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 30V, 0.54A, Dfn1006 Rohs Compliant Diodes Inc. |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 540 milliamps |
