MOSFET 2P-CH 30V 3.9A 8SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033853-DMP3085LSD-1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 563pF @ 25V
Maximum Rds On at Id,Vgs: 70 mOhm @ 5.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Application Field: Used in System Monitoring
Mosfet Array 2 P-Channel (Dual) 30V 3.9A 1.1W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 30V 3.9A 1.1W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 30V 3.9A 1.1W Surface Mount 8-SO
MOSFET 2P-CH 30V 3.9A 8SO Product overview: DMP3085LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMP3085LSD-13 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 30V 3.9A 8SO
MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A
30V 3.9A 70mΩ@10V,5.3A 1.1W 3V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS
MOSFET, DUAL P-CH, -30V, -3.9A, SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMP3085LSD-13 | 1033853-DMP3085LSD-13 | DMP3085LSD-13DITR-ND | 289-DMP3085LSD-13 | DMP3085LSD-13 | DMP3085LSD-13 | DMP3085LSD-13 | 07AH3809 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP3085LSD-13 | FET, MOSFET Arrays | 30V 3.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, Dual P-Ch, -30V, -3.9A, Soic; Transistor Polarity Diodes Inc. |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 3900 milliamps | -3900 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
