Win Source Part Number: 1376751-DMP3028LFDE-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Package: Tape & Reel
Product Status: Active
Package / Case: 6-PowerUDFN
Supplier Device Package: U-DFN2020-6 (Type E)
Base Product Number: DMP3028
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Power Dissipation (Max): 660mW (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
P-Channel 30V 6.8A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
P-Channel 30V 6.8A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
P-Channel 30V 6.8A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
MOSFET P-CH 30V 6.8A 6UDFN
MOSFET, P-CH, 30V, 6.8A, U-DFN2020 ROHS COMPLIANT: YES
MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A
MOSFET P-CH 30V 6.8A 6UDFN
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1376751-DMP3028LFDE-13 | DMP3028LFDE-13DITR-ND | DMP3028LFDE-13 | 28AK8744 | DMP3028LFDE-13 | DMP3028LFDE-13 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 30V, 6.8A, U-Dfn2020 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 660 milliwatts | 660 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | 6-PowerUDFN | 6-PowerUDFN | TO-3 | 6-PowerUDFN |