DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP3010LPSQ-13 DMP3010LPSQ-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033837-DMP3010LPSQ- 13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.18W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI5060-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 36A (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 126.2nC @ 10V Max Input Capacitance: 6234pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP3010LPSQ-13 - 1033837-DMP3010LPSQ-13 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMP3010LPSQ-13 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 31-DMP3010LPSQ-13DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 31-DMP3010LPSQ-13CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 31-DMP3010LPSQ-13TR-ND - DigiKey
    DigiKey
  • Mosfet, P-Ch, 30V, 36A, Powerdi 5060 Rohs Compliant Diodes Inc. - 28AK8732 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP3010LPSQ-13 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033837-DMP3010LPSQ- 13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.18W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI5060-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 36A (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 126.2nC @ 10V Max Input Capacitance: 6234pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP3010LPSQ-13 - 1033837-DMP3010LPSQ-13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP3010LPSQ-13
1033837-DMP3010LPSQ-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP3010LPSQ-13 1033837-DMP3010LPSQ-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033837-DMP3010LPSQ- 13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.18W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI5060-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 36A (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 126.2nC @ 10V Max Input Capacitance: 6234pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033837-DMP3010LPSQ-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.18W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI5060-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 36A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 126.2nC @ 10V
Max Input Capacitance: 6234pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - DMP3010LPSQ-13 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMP3010LPSQ-13
Single FETs, MOSFETs DMP3010LPSQ-13
MOSFET P-CH 30V 36A PWRDI5060-8

MOSFET P-CH 30V 36A PWRDI5060-8

Supplier's Site
Single FETs, MOSFETs - 31-DMP3010LPSQ-13DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMP3010LPSQ-13DKR-ND
Single FETs, MOSFETs 31-DMP3010LPSQ-13DKR-ND
MOSFET P-CH 30V 36A PWRDI5060-8

MOSFET P-CH 30V 36A PWRDI5060-8

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMP3010LPSQ-13CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMP3010LPSQ-13CT-ND
Single FETs, MOSFETs 31-DMP3010LPSQ-13CT-ND
MOSFET P-CH 30V 36A PWRDI5060-8

MOSFET P-CH 30V 36A PWRDI5060-8

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMP3010LPSQ-13TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMP3010LPSQ-13TR-ND
Single FETs, MOSFETs 31-DMP3010LPSQ-13TR-ND
P-Channel 30V 36A (Ta) 2.18W (Ta) Surface Mount PowerDI5060-8

P-Channel 30V 36A (Ta) 2.18W (Ta) Surface Mount PowerDI5060-8

Buy Now Datasheet
Mosfet, P-Ch, 30V, 36A, Powerdi 5060 Rohs Compliant Diodes Inc. - 28AK8732 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 36A, Powerdi 5060 Rohs Compliant Diodes Inc.
28AK8732
Mosfet, P-Ch, 30V, 36A, Powerdi 5060 Rohs Compliant Diodes Inc. 28AK8732
MOSFET, P-CH, 30V, 36A, POWERDI 5060 ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 36A, POWERDI 5060 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP3010LPSQ-13 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP3010LPSQ-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP3010LPSQ-13
MOSFET P-CH 30V 36A PWRDI5060-8

MOSFET P-CH 30V 36A PWRDI5060-8

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMP3010LPSQ-13
MOSFET DMP3010LPSQ-13
MOSFET FET BVDSS 25V-30V P-Ch 36A 7.5Vgs 6324

MOSFET FET BVDSS 25V-30V P-Ch 36A 7.5Vgs 6324

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033837-DMP3010LPSQ-13 DMP3010LPSQ-13 31-DMP3010LPSQ-13DKR-ND 28AK8732 DMP3010LPSQ-13 DMP3010LPSQ-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP3010LPSQ-13 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, P-Ch, 30V, 36A, Powerdi 5060 Rohs Compliant Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts 30 volts
PD 2180 milliwatts 2180 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerDI5060-8 8-PowerTDFN 8-PowerTDFN TO-3 Surface Mount
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