MOSFET P-CH 20V 330MA 3DFN0806H4 Product overview: DMP22D4UFA-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 330MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 330MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP22D4UFA-7B can be used for catalog matching and distributor lookup.
P-Channel 20V 330mA (Ta) 400mW (Ta) Surface Mount X2-DFN0806-3
P-Channel 20V 330mA (Ta) 400mW (Ta) Surface Mount X2-DFN0806-3
P-Channel 20V 330mA (Ta) 400mW (Ta) Surface Mount X2-DFN0806-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 080593-DMP22D4UFA-7B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-DFN0806H4
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 330mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.4nC @ 4.5V
Max Input Capacitance: 28.7pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 330MA 3DFN0806H4
MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K
MOSFET, P-CH, 20V, 0.33A, X2-DFN0806 ROHS COMPLIANT: YES
MOSFET P-CH 20V 330MA 3DFN0806H4
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMP22D4UFA-7B | DMP22D4UFA-7BDITR-ND | 080593-DMP22D4UFA-7B | DMP22D4UFA-7B | DMP22D4UFA-7B | 28AK8722 | DMP22D4UFA-7B |
| Product Name | 20V 330MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP22D4UFA-7B | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 20V, 0.33A, X2-Dfn0806 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 400 milliwatts | 400 milliwatts | 400 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
