DIODES Incorporated Single FETs, MOSFETs DMP21D1UT-13

P-channel enhancement mode MOSFET designed for high-efficiency power-management applications such as DC-DC converters and load switches. Housed in an SOT523 package measuring 1.60 mm x 1.60 mm, it features a drain-source voltage rating of -20 V, continuous drain current of -0.63 A at VGS = -4.5 V, and on-resistance of 710 mΩ at VGS = -4.5 V. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. Thermal resistance is 287 °C/W when mounted on a 1 in² copper plate. ESD-protected gate with a gate-source voltage limit of ±8 V. Stored and operated from -55 °C to +150 °C. Packaged in tape and reel for high-volume automated assembly.