MOSFET 2P-CH 20V 3.8A 6UDFN Product overview: DMP2160UFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMP2160UFDB-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 20V 3.8A 1.4W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 P-Channel (Dual) 20V 3.8A 1.4W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 P-Channel (Dual) 20V 3.8A 1.4W Surface Mount U-DFN2020-6 (Type B)
Manufacturer: Diodes Incorporated
Win Source Part Number: 080592-DMP2160UFDB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMP2160UFDB
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type B)
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.8A
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 6.5nC @ 4.5V
Max Input Capacitance: 536pF @ 10V
Maximum Rds On at Id,Vgs: 70 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): SiA921EDJ-T4-GE3; UPA2670T1R-E2-AX; SMMA921EDJ-T1-GE3; SMMA921EDJ;
Introduction Date: November 25, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET, DUAL, P-CH, 20V, 3.8A ROHS COMPLIANT: YES
MOSFET 2P-CH 20V 3.8A 6UDFN
MOSFET 20V 3.8A DUAL P-CHAN
MOSFET 2P-CH 20V 3.8A 6UDFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-DMP2160UFDB-7 | DMP2160UFDB-7DITR-ND | 080592-DMP2160UFDB-7 | 28AK8721 | DMP2160UFDB-7 | 233-DMP2160UFDB-7 | DMP2160UFDB-7 |
| Product Name | 20V 3.8A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP2160UFDB-7 | Mosfet, Dual, P-Ch, 20V, 3.8A Rohs Compliant Diodes Inc. | FET, MOSFET Arrays | MOSFET 20V 3.8A DUAL P-CHAN | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | -20 volts | |||
| PD | 1400 milliwatts | 1400 milliwatts | 1400 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tape & Reel (TR) | 6-UDFN Exposed Pad | SOT3; U-DFN2020-6 (Type B) | TO-3 | 6-UDFN Exposed Pad |
