DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP210DUFB4-7 DMP210DUFB4-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080590-DMP210DUFB4-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Input Capacitance: 175pF @ 15V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 5 Ohm @ 100mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080590-DMP210DUFB4-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Input Capacitance: 175pF @ 15V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 5 Ohm @ 100mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP210DUFB4-7 - 080590-DMP210DUFB4-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP210DUFB4-7
080590-DMP210DUFB4-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP210DUFB4-7 080590-DMP210DUFB4-7
Manufacturer: Diodes Incorporated Win Source Part Number: 080590-DMP210DUFB4-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Input Capacitance: 175pF @ 15V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 5 Ohm @ 100mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 080590-DMP210DUFB4-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 350mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Input Capacitance: 175pF @ 15V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 5 Ohm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DMP210DUFB4-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMP210DUFB4-7
Single FETs, MOSFETs DMP210DUFB4-7
MOSFET P-CH 20V 200MA 3DFN

MOSFET P-CH 20V 200MA 3DFN

Supplier's Site
Singapore
20V 200MA MOSFET Transistor
278-DMP210DUFB4-7
20V 200MA MOSFET Transistor 278-DMP210DUFB4-7
MOSFET P-CH 20V 200MA 3DFN Product overview: DMP210DUFB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP210DUFB4-7 can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 200MA 3DFN Product overview: DMP210DUFB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP210DUFB4-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP210DUFB4-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP210DUFB4-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP210DUFB4-7
MOSFET P-CH 20V 200MA 3DFN

MOSFET P-CH 20V 200MA 3DFN

Supplier's Site
Mosfet, P-Ch, 20V, 0.2A, X2-Dfn1006 Rohs Compliant Diodes Inc. - 28AK8716 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 20V, 0.2A, X2-Dfn1006 Rohs Compliant Diodes Inc.
28AK8716
Mosfet, P-Ch, 20V, 0.2A, X2-Dfn1006 Rohs Compliant Diodes Inc. 28AK8716
MOSFET, P-CH, 20V, 0.2A, X2-DFN1006 ROHS COMPLIANT: YES

MOSFET, P-CH, 20V, 0.2A, X2-DFN1006 ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-Channel -20V FET 8Vgss 0.35W

MOSFET P-Channel -20V FET 8Vgss 0.35W

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 080590-DMP210DUFB4-7 DMP210DUFB4-7 278-DMP210DUFB4-7 DMP210DUFB4-7 28AK8716 DMP210DUFB4-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP210DUFB4-7 Single FETs, MOSFETs 20V 200MA MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, 20V, 0.2A, X2-Dfn1006 Rohs Compliant Diodes Inc. MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 350 milliwatts 350 milliwatts 350 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; X2-DFN1006-3 3-XFDFN Tape & Reel (TR) TO-3
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