MOSFET P-CH 20V 2.9A X2DSN1006-3
Win Source Part Number: 1376801-DMP2088LCP3-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Package: Tape & Reel
Product Status: Obsolete
Package / Case: 3-XFDFN
Supplier Device Package: X2-DSN1006-3
Base Product Number: DMP2088
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Rds On (Max) @ Id, Vgs: 88mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Vgs (Max): -12V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
Power Dissipation (Max): 1.13W
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
P-Channel 20V 2.9A (Ta) 1.13W Surface Mount X2-DSN1006-3
MOSFET, P-CH, -2.9A, -20V, X2-DSN1006; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET P-CH 20V 2.9A X2DSN1006-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMP2088LCP3-7 | 1376801-DMP2088LCP3-7 | DMP2088LCP3-7DITR-ND | 39AH6603 | DMP2088LCP3-7 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -2.9A, -20V, X2-Dsn1006; Channel Type Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 20 volts | ||||
| IDSS | 2900 milliamps | 2900 milliamps |
