The MOSFET, P-Channel, 25V, 6.7A, U-DFN2020 from Diodes Inc. is designed for high efficiency power management applications. It features a maximum drain-source voltage of -25V and a low on-state resistance (RDS(ON)) of 27mOc at a gate-source voltage of -4.5V, ensuring minimized on-state losses. The device is suitable for load switching, battery management, and power management functions. It has a compact profile of 0.6mm, making it ideal for low-profile applications, and a PCB footprint of 4mm¬=. The MOSFET is ESD protected and compliant with RoHS standards, ensuring it meets environmental regulations. It is also qualified to JEDEC standards for high reliability. The device operates within a temperature range of -55¬8C to +150¬8C and has a total power dissipation of 0.8W at 25¬8C.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033821-DMP2039UFDE-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 800mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 6.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 48.7nC @ 8V
Max Input Capacitance: 2530pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
P-Channel 25V 6.7A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type E)
P-Channel 25V 6.7A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type E)
P-Channel 25V 6.7A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type E)
MOSFET P-CH 25V 6.7A 6UDFN
MOSFET P-CH 25V 6.7A 6UDFN
MOSFET, P-CH, 25V, 6.7A, U-DFN2020 ROHS COMPLIANT: YES
MOSFET MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033821-DMP2039UFDE-7 | 31-DMP2039UFDE-7DKR-ND | DMP2039UFDE-7 | DMP2039UFDE-7 | 36AJ3597 | DMP2039UFDE-7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP2039UFDE-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 25V, 6.7A, U-Dfn2020 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 25 volts | 25 volts | ||||
| PD | 800 milliwatts | 800 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
