DIODES Incorporated Single FETs, MOSFETs DMP2016UFDF-13

P-channel enhancement mode MOSFET in U-DFN2020-6 package, 2.0mm × 2.0mm, designed for low-profile power management applications. It has a drain-source voltage rating of -20V, on-resistance of 15mΩ at -4.5V gate drive, and continuous drain current of -7.5A at 25°C with a 2oz copper PCB. It meets AEC-Q100, AEC-Q101, and AEC-Q200 qualifications, and is RoHS compliant with UL 94 V-0 flammability rating. Thermal resistance junction-to-ambient is 70°C/W when mounted on a 1-inch square copper plate. Moisture sensitivity level is 1 per J-STD-020.