The DMP2012UFDE-7 is a 20V P-channel enhancement mode MOSFET in a U-DFN2020-6 package, designed for high-efficiency power-management applications. It features a low on-resistance of 9mΩ at VGS = -4.5V and -14A continuous drain current, with an ESD-protected gate and RoHS-compliant, halogen- and antimony-free construction. The device meets AEC-Q100/101/104/200 qualifications and is manufactured in IATF 16949 certified facilities. It has a thermal resistance of 50°C/W when mounted on a 2oz copper FR-4 PCB with thermal bias, operates from -55°C to +150°C, and is supplied in tape and reel packaging with 3,000 units per reel.
Datasheet Summary Powered by GS/AI
The DMP2012UFDE-7 is a 20V P-channel enhancement mode MOSFET in a U-DFN2020-6 package, designed for high-efficiency power-management applications. It features a low on-resistance of 9mΩ at VGS = -4.5V and -14A continuous drain current, with an ESD-protected gate and RoHS-compliant, halogen- and antimony-free construction. The device meets AEC-Q100/101/104/200 qualifications and is manufactured in IATF 16949 certified facilities. It has a thermal resistance of 50°C/W when mounted on a 2oz copper FR-4 PCB with thermal bias, operates from -55°C to +150°C, and is supplied in tape and reel packaging with 3,000 units per reel.
