DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP2008UFG-7 DMP2008UFG-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033816-DMP2008UFG-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Family Name: DMP2008UFG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 14A (Ta), 54A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 72nC @ 4.5V Max Input Capacitance: 6909pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 8 mOhm @ 12A, 4.5V Alternative Parts (Cross-Reference): SiSH407DN-T1-GE3; SI7107DN; SiS407DN-T1-GE3; SI7107DN-T1-GE3; Introduction Date: October 01, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033816-DMP2008UFG-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Family Name: DMP2008UFG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 14A (Ta), 54A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 72nC @ 4.5V Max Input Capacitance: 6909pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 8 mOhm @ 12A, 4.5V Alternative Parts (Cross-Reference): SiSH407DN-T1-GE3; SI7107DN; SiS407DN-T1-GE3; SI7107DN-T1-GE3; Introduction Date: October 01, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP2008UFG-7 - 1033816-DMP2008UFG-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP2008UFG-7
1033816-DMP2008UFG-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP2008UFG-7 1033816-DMP2008UFG-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033816-DMP2008UFG-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Family Name: DMP2008UFG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 14A (Ta), 54A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 72nC @ 4.5V Max Input Capacitance: 6909pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 8 mOhm @ 12A, 4.5V Alternative Parts (Cross-Reference): SiSH407DN-T1-GE3; SI7107DN; SiS407DN-T1-GE3; SI7107DN-T1-GE3; Introduction Date: October 01, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033816-DMP2008UFG-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Family Name: DMP2008UFG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 14A (Ta), 54A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 72nC @ 4.5V
Max Input Capacitance: 6909pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 8 mOhm @ 12A, 4.5V
Alternative Parts (Cross-Reference): SiSH407DN-T1-GE3; SI7107DN; SiS407DN-T1-GE3; SI7107DN-T1-GE3;
Introduction Date: October 01, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - DMP2008UFG-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMP2008UFG-7
Single FETs, MOSFETs DMP2008UFG-7
MOSFET P-CH 20V 14A PWRDI3333

MOSFET P-CH 20V 14A PWRDI3333

Supplier's Site Datasheet
Single FETs, MOSFETs - DMP2008UFG-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP2008UFG-7DIDKR-ND
Single FETs, MOSFETs DMP2008UFG-7DIDKR-ND
P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8

P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8

Buy Now Datasheet
Single FETs, MOSFETs - DMP2008UFG-7DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP2008UFG-7DICT-ND
Single FETs, MOSFETs DMP2008UFG-7DICT-ND
P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8

P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8

Buy Now Datasheet
Single FETs, MOSFETs - DMP2008UFG-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP2008UFG-7DITR-ND
Single FETs, MOSFETs DMP2008UFG-7DITR-ND
P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8

P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 20V P-CH MOSFET

MOSFET 20V P-CH MOSFET

Buy Now Datasheet
Mosfet, P-Ch, -20V, -54A, Powerdi3333; Transistor Polarity Diodes Inc. - 07AH3797 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -54A, Powerdi3333; Transistor Polarity Diodes Inc.
07AH3797
Mosfet, P-Ch, -20V, -54A, Powerdi3333; Transistor Polarity Diodes Inc. 07AH3797
MOSFET, P-CH, -20V, -54A, POWERDI3333; Transistor Polarity:P Channel; Continuous Drain Current Id:-54A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

MOSFET, P-CH, -20V, -54A, POWERDI3333; Transistor Polarity:P Channel; Continuous Drain Current Id:-54A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP2008UFG-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP2008UFG-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP2008UFG-7
MOSFET P-CH 20V 14A PWRDI3333

MOSFET P-CH 20V 14A PWRDI3333

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1033816-DMP2008UFG-7 DMP2008UFG-7 DMP2008UFG-7DIDKR-ND DMP2008UFG-7 07AH3797 DMP2008UFG-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP2008UFG-7 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, P-Ch, -20V, -54A, Powerdi3333; Transistor Polarity Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 2400 to 41000 milliwatts 2400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerDI3333-8 8-PowerVDFN 8-PowerVDFN TO-3 8-PowerVDFN
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