Manufacturer: Diodes Incorporated
Win Source Part Number: 808853-DMP2008UFG-13
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2.4W , 41W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 8mOhm at 12A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 72nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 6909pF at 10V
Current - Continuous Drain (Id) at 25°C: 14A , 54A (Tc)
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±8V
P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
MOSFET P-CH 20V 14A PWRDI3333
MOSFET P-CH 20V 14A PWRDI3333 Product overview: DMP2008UFG-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP2008UFG-13 can be used for catalog matching and distributor lookup.
MOSFET, P-CH, 20V, 54A, POWERDI 3333 ROHS COMPLIANT: YES
MOSFET P-CH 20V 14A PWRDI3333
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 808853-DMP2008UFG-13 | DMP2008UFG-13DITR-ND | DMP2008UFG-13 | 278-DMP2008UFG-13 | 28AK8690 | DMP2008UFG-13 |
| Product Name | FETs - Single - DMP2008UFG-13 | Single FETs, MOSFETs | Single FETs, MOSFETs | 20V 14A MOSFET Transistor | Mosfet, P-Ch, 20V, 54A, Powerdi 3333 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| PD | 2400 to 41000 milliwatts | 2400 milliwatts | 2.4 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | 8-PowerVDFN | 8-PowerVDFN | Tape & Reel (TR) | TO-3 | 8-PowerVDFN |