DIODES Incorporated 12V 2.5A MOSFET Transistor DMP1100UCB4-7

MOSFET P-CH 12V 2.5A WLB0808 Product overview: DMP1100UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP1100UCB4-7 can be used for catalog matching and distributor lookup.

P-Channel 12V 2.5A (Ta) 670mW (Ta) Surface Mount X2-WLB0808-4

P-Channel 12V 2.5A (Ta) 670mW (Ta) Surface Mount X2-WLB0808-4

P-Channel 12V 2.5A (Ta) 670mW (Ta) Surface Mount X2-WLB0808-4

Manufacturer: Diodes Incorporated
Win Source Part Number: 803163-DMP1100UCB4-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: X2-WLB0808-4
Drive Voltage (Max Rds On, Min Rds On): 1.3V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 4-UFBGA, WLBGA
Power Dissipation (Maximum): 670mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 83mOhm at 3A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 820pF at 6V
Current - Continuous Drain (Id) at 25°C: 2.5A
Vgs(th) (Maximum) at Id: 800mV at 250μA
Maximum Vgs: ±8V