DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP10H400SE-13 DMP10H400SE-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033809-DMP10H400SE- 13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 2.3A (Ta), 6A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17.5nC @ 10V Max Input Capacitance: 1239pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033809-DMP10H400SE- 13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 2.3A (Ta), 6A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17.5nC @ 10V Max Input Capacitance: 1239pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP10H400SE-13 - 1033809-DMP10H400SE-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP10H400SE-13
1033809-DMP10H400SE-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP10H400SE-13 1033809-DMP10H400SE-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033809-DMP10H400SE- 13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 2.3A (Ta), 6A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17.5nC @ 10V Max Input Capacitance: 1239pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033809-DMP10H400SE-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 13.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2.3A (Ta), 6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17.5nC @ 10V
Max Input Capacitance: 1239pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - DMP10H400SE-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP10H400SE-13DITR-ND
Single FETs, MOSFETs DMP10H400SE-13DITR-ND
P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223-3

P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - DMP10H400SE-13DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP10H400SE-13DICT-ND
Single FETs, MOSFETs DMP10H400SE-13DICT-ND
P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223-3

P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - DMP10H400SE-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP10H400SE-13DIDKR-ND
Single FETs, MOSFETs DMP10H400SE-13DIDKR-ND
P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223-3

P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - DMP10H400SE-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMP10H400SE-13
Single FETs, MOSFETs DMP10H400SE-13
MOSFET P-CH 100V 2.3A/6A SOT223

MOSFET P-CH 100V 2.3A/6A SOT223

Supplier's Site Datasheet
Mosfet, P-Ch, -100V, -6A, Sot223; Channel Type Diodes Inc. - 07AH3793 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -100V, -6A, Sot223; Channel Type Diodes Inc.
07AH3793
Mosfet, P-Ch, -100V, -6A, Sot223; Channel Type Diodes Inc. 07AH3793
MOSFET, P-CH, -100V, -6A, SOT223; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

MOSFET, P-CH, -100V, -6A, SOT223; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
DMP10H400SE-13
Triode/MOS Tube/Transistor >> MOSFETs DMP10H400SE-13
100V 250mΩ@10V,5A 3V@250uA P Channel SOT-223 MOSFETs ROHS

100V 250mΩ@10V,5A 3V@250uA P Channel SOT-223 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP10H400SE-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP10H400SE-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP10H400SE-13
MOSFET P-CH 100V 2.3A/6A SOT223

MOSFET P-CH 100V 2.3A/6A SOT223

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V P-Ch Enh FET 250mOhm -2.3A

MOSFET 100V P-Ch Enh FET 250mOhm -2.3A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033809-DMP10H400SE-13 DMP10H400SE-13DITR-ND DMP10H400SE-13 07AH3793 DMP10H400SE-13 DMP10H400SE-13 DMP10H400SE-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP10H400SE-13 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, P-Ch, -100V, -6A, Sot223; Channel Type Diodes Inc. Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 2000 to 13700 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-223 SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA TO-3 SOT223 TO-261-4, TO-261AA
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