DIODES Incorporated Single FETs, MOSFETs DMP1080UCB4-7

Description
P-Channel 12V 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4
Request a Quote Datasheet
Description
P-Channel 12V 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMP1080UCB4-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP1080UCB4-7DITR-ND
Single FETs, MOSFETs DMP1080UCB4-7DITR-ND
P-Channel 12V 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4

P-Channel 12V 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4

Buy Now Datasheet
Single FETs, MOSFETs - DMP1080UCB4-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMP1080UCB4-7
Single FETs, MOSFETs DMP1080UCB4-7
MOSFET P-CH 12V 3.3A U-WLB1010-4

MOSFET P-CH 12V 3.3A U-WLB1010-4

Supplier's Site Datasheet
12V 3.3A MOSFET Transistor - 278-DMP1080UCB4-7 - ERSAELECTRONICS PTE. LTD.
Singapore
12V 3.3A MOSFET Transistor
278-DMP1080UCB4-7
12V 3.3A MOSFET Transistor 278-DMP1080UCB4-7
MOSFET P-CH 12V 3.3A U-WLB1010-4 Product overview: DMP1080UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 3.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP1080UCB4-7 can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 3.3A U-WLB1010-4 Product overview: DMP1080UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 3.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP1080UCB4-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1080UCB4-7 - 1033807-DMP1080UCB4-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1080UCB4-7
1033807-DMP1080UCB4-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1080UCB4-7 1033807-DMP1080UCB4-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033807-DMP1080UCB4- 7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 820mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-WLB1010-4 Dimension: 4-UFBGA, WLBGA Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.3A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 5nC @ 4.5V Max Input Capacitance: 350pF @ 6V Maximum Gate-Source Voltage: -6V Maximum Rds On at Id,Vgs: 80 mOhm @ 500mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033807-DMP1080UCB4-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 820mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-WLB1010-4
Dimension: 4-UFBGA, WLBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Max Input Capacitance: 350pF @ 6V
Maximum Gate-Source Voltage: -6V
Maximum Rds On at Id,Vgs: 80 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A

MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP1080UCB4-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP1080UCB4-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP1080UCB4-7
MOSFET P-CH 12V 3.3A U-WLB1010-4

MOSFET P-CH 12V 3.3A U-WLB1010-4

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMP1080UCB4-7DITR-ND DMP1080UCB4-7 278-DMP1080UCB4-7 1033807-DMP1080UCB4-7 DMP1080UCB4-7 DMP1080UCB4-7
Product Name Single FETs, MOSFETs Single FETs, MOSFETs 12V 3.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1080UCB4-7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type 4-UFBGA, WLBGA 4-UFBGA, WLBGA Tape & Reel (TR) SOT3; U-WLB1010-4 4-UFBGA, WLBGA
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts 12 volts 12 volts
IDSS 3300 milliamps
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