DIODES Incorporated Single FETs, MOSFETs DMP1080UCB4-7

P-Channel 12V 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4

MOSFET P-CH 12V 3.3A U-WLB1010-4 Product overview: DMP1080UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 3.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP1080UCB4-7 can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 3.3A U-WLB1010-4

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033807-DMP1080UCB4-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 820mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-WLB1010-4
Dimension: 4-UFBGA, WLBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Max Input Capacitance: 350pF @ 6V
Maximum Gate-Source Voltage: -6V
Maximum Rds On at Id,Vgs: 80 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance