DIODES Incorporated Mosfet, P Channel, W Esd, 12V, Sot23; Channel Type Diodes Inc. DMP1045U

Description
MOSFET, P CHANNEL, W ESD, 12V, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:550mV RoHS Compliant: Yes
Description
MOSFET, P CHANNEL, W ESD, 12V, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:550mV RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The DMP1045U is a P-channel enhancement mode MOSFET designed for high-efficiency power management applications, featuring low on-resistance and fast switching. It is packaged in SOT-23 and has a drain-source voltage rating of -12V. The device exhibits a maximum on-resistance of 31mΩ at VGS = -4.5V and 45mΩ at VGS = -2.5V, with continuous drain currents of 5.2A and 4.3A respectively under specified conditions. It includes ESD protection up to 3kV, is RoHS compliant, halogen- and antimony-free, and qualified to AEC-Q101 standards. The thermal resistance junction-to-ambient is 168°C/W on a minimum pad layout and 99°C/W on a 2oz copper board with thermal vias. The operating and storage temperature range is -55°C to +150°C.

Datasheet Summary
Powered by GS/AI

The DMP1045U is a P-channel enhancement mode MOSFET designed for high-efficiency power management applications, featuring low on-resistance and fast switching. It is packaged in SOT-23 and has a drain-source voltage rating of -12V. The device exhibits a maximum on-resistance of 31mΩ at VGS = -4.5V and 45mΩ at VGS = -2.5V, with continuous drain currents of 5.2A and 4.3A respectively under specified conditions. It includes ESD protection up to 3kV, is RoHS compliant, halogen- and antimony-free, and qualified to AEC-Q101 standards. The thermal resistance junction-to-ambient is 168°C/W on a minimum pad layout and 99°C/W on a 2oz copper board with thermal vias. The operating and storage temperature range is -55°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
Mosfet, P Channel, W Esd, 12V, Sot23; Channel Type Diodes Inc. - 65T8227 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, W Esd, 12V, Sot23; Channel Type Diodes Inc.
65T8227
Mosfet, P Channel, W Esd, 12V, Sot23; Channel Type Diodes Inc. 65T8227
MOSFET, P CHANNEL, W ESD, 12V, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:550mV RoHS Compliant: Yes

MOSFET, P CHANNEL, W ESD, 12V, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:550mV RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 65T8227
Product Name Mosfet, P Channel, W Esd, 12V, Sot23; Channel Type Diodes Inc.
Polarity P-Channel
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