MOSFET, P CHANNEL, W ESD, 12V, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:550mV RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 65T8227 |
| Product Name | Mosfet, P Channel, W Esd, 12V, Sot23; Channel Type Diodes Inc. |
| Polarity | P-Channel |
