MOSFET P-CH 12V 9.1A 6UDFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 014464-DMP1022UFDE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 660mW (Ta)
Family Name: DMP1022UFDE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 9.1A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 42.6nC @ 5V
Max Input Capacitance: 2953pF @ 4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 16 mOhm @ 8.2A, 4.5V
Alternative Parts (Cross-Reference): SSM6J505NU,LF; SSM6J505NU; FDMA908PZ; SiA413ADJ-T4-GE3;
Introduction Date: December 15, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
P-Channel 12V 9.1A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
MOSFET P-CH 12V 9.1A 6UDFN Product overview: DMP1022UFDE-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP1022UFDE-7 can be used for catalog matching and distributor lookup.
MOSFET P-CH 12V 9.1A 6UDFN
MOSFET, P-CH, 12V, 9.1A, U-DFN2020 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMP1022UFDE-7 | 014464-DMP1022UFDE-7 | DMP1022UFDE-7DITR-ND | 278-DMP1022UFDE-7 | DMP1022UFDE-7 | 28AK8674 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1022UFDE-7 | Single FETs, MOSFETs | 12V 9.1A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 12V, 9.1A, U-Dfn2020 Rohs Compliant Diodes Inc. |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 12 volts | 12 volts | 12 volts | |||
| IDSS | 9100 milliamps | |||||
| PD | 660 milliwatts | 660 milliwatts | 2030 milliwatts |