DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1022UFDE-7 DMP1022UFDE-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014464-DMP1022UFDE-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 660mW (Ta) Family Name: DMP1022UFDE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2020-6 (Type E) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 9.1A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 42.6nC @ 5V Max Input Capacitance: 2953pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 16 mOhm @ 8.2A, 4.5V Alternative Parts (Cross-Reference): SSM6J505NU,LF; SSM6J505NU; FDMA908PZ; SiA413ADJ-T4-GE3; Introduction Date: December 15, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014464-DMP1022UFDE-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 660mW (Ta) Family Name: DMP1022UFDE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2020-6 (Type E) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 9.1A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 42.6nC @ 5V Max Input Capacitance: 2953pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 16 mOhm @ 8.2A, 4.5V Alternative Parts (Cross-Reference): SSM6J505NU,LF; SSM6J505NU; FDMA908PZ; SiA413ADJ-T4-GE3; Introduction Date: December 15, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1022UFDE-7
014464-DMP1022UFDE-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1022UFDE-7 014464-DMP1022UFDE-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014464-DMP1022UFDE-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 660mW (Ta) Family Name: DMP1022UFDE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2020-6 (Type E) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 9.1A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 42.6nC @ 5V Max Input Capacitance: 2953pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 16 mOhm @ 8.2A, 4.5V Alternative Parts (Cross-Reference): SSM6J505NU,LF; SSM6J505NU; FDMA908PZ; SiA413ADJ-T4-GE3; Introduction Date: December 15, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 014464-DMP1022UFDE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 660mW (Ta)
Family Name: DMP1022UFDE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 9.1A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 42.6nC @ 5V
Max Input Capacitance: 2953pF @ 4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 16 mOhm @ 8.2A, 4.5V
Alternative Parts (Cross-Reference): SSM6J505NU,LF; SSM6J505NU; FDMA908PZ; SiA413ADJ-T4-GE3;
Introduction Date: December 15, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - DMP1022UFDE-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP1022UFDE-7DITR-ND
Single FETs, MOSFETs DMP1022UFDE-7DITR-ND
P-Channel 12V 9.1A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

P-Channel 12V 9.1A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Buy Now Datasheet
Single FETs, MOSFETs - DMP1022UFDE-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMP1022UFDE-7
Single FETs, MOSFETs DMP1022UFDE-7
MOSFET P-CH 12V 9.1A 6UDFN

MOSFET P-CH 12V 9.1A 6UDFN

Supplier's Site Datasheet
Mosfet, P-Ch, 12V, 9.1A, U-Dfn2020 Rohs Compliant Diodes Inc. - 28AK8674 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 12V, 9.1A, U-Dfn2020 Rohs Compliant Diodes Inc.
28AK8674
Mosfet, P-Ch, 12V, 9.1A, U-Dfn2020 Rohs Compliant Diodes Inc. 28AK8674
MOSFET, P-CH, 12V, 9.1A, U-DFN2020 ROHS COMPLIANT: YES

MOSFET, P-CH, 12V, 9.1A, U-DFN2020 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP1022UFDE-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP1022UFDE-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP1022UFDE-7
MOSFET P-CH 12V 9.1A 6UDFN

MOSFET P-CH 12V 9.1A 6UDFN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 014464-DMP1022UFDE-7 DMP1022UFDE-7DITR-ND DMP1022UFDE-7 28AK8674 DMP1022UFDE-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1022UFDE-7 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, P-Ch, 12V, 9.1A, U-Dfn2020 Rohs Compliant Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 12 volts 12 volts
PD 660 milliwatts 660 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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