DIODES Incorporated Single FETs, MOSFETs DMP1012UCB9-7

Description
P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9
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Description
P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9
Request a Quote Datasheet

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Single FETs, MOSFETs - DMP1012UCB9-7-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMP1012UCB9-7-ND
Single FETs, MOSFETs DMP1012UCB9-7-ND
P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9

P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1012UCB9-7 - 1033804-DMP1012UCB9-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1012UCB9-7
1033804-DMP1012UCB9-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1012UCB9-7 1033804-DMP1012UCB9-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033804-DMP1012UCB9- 7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 890mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-WLB1515-9 Dimension: 9-UFBGA, WLBGA Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 10.5nC @ 4.5V Max Input Capacitance: 1060pF @ 4V Maximum Gate-Source Voltage: -6V Maximum Rds On at Id,Vgs: 10 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033804-DMP1012UCB9-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 890mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-WLB1515-9
Dimension: 9-UFBGA, WLBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 10.5nC @ 4.5V
Max Input Capacitance: 1060pF @ 4V
Maximum Gate-Source Voltage: -6V
Maximum Rds On at Id,Vgs: 10 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

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Sheung Wan, Hong Kong
MOSFET MOSFET

MOSFET MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP1012UCB9-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP1012UCB9-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP1012UCB9-7
MOSFET P-CH 8V 10A U-WLB1515-9

MOSFET P-CH 8V 10A U-WLB1515-9

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMP1012UCB9-7-ND 1033804-DMP1012UCB9-7 DMP1012UCB9-7 DMP1012UCB9-7
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMP1012UCB9-7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type 9-UFBGA, WLBGA SOT3; U-WLB1515-9 9-UFBGA, WLBGA
V(BR)DSS 8 volts
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